tsm2n60s taiwan semiconductor document number: ds_p0000066 1 version: b15 n-channel power mosfet 600v, 0.6a, 5 features robust high voltage termination avalanche energy specified diode is characterized for use in bridge circuits source to drain diode recovery time comparable to a discrete fast recovery diode. application power supply lighting charger key performance parameters parameter value unit v ds 600 v r ds(on) (max) 5 q g 13 nc sot - 223 notes: moisture sensitivity level: level 3. per j-std-020 absolute maximum ratings (t a = 25c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v continuous drain current (note 1) t c = 25c i d 0.6 a t c = 100c 0.36 pulsed drain current (note 2) i dm 1.5 a total power dissipation @ t c = 25c p dtot 2.5 w operating junction temperature t j 150 c operating junction and storage temperature range t j , t stg - 55 to +150 c thermal performance parameter symbol limit unit junction to case thermal resistance r ?jc 15 c/w junction to ambient thermal resistance r ?ja 55.8 c/w notes: r ?ja is the sum of the junction-to-case and case-to-amb ient thermal resistances. the case thermal referenc e is defined at the solder mounting surface of the drain pins. r ?ja is guaranteed by design while r ?ca is determined by the users board design. r ?ja shown below for single device operation on fr-4 pc b in still air
tsm2n60s taiwan semiconductor document number: ds_p0000066 2 version: b15 electrical specifications (t a = 25c unless otherwise noted) parameter conditions symbol min typ max unit static (note 3) drain-source breakdown voltage v gs = 0v, i d = 250a bv dss 600 -- -- v gate threshold voltage v ds = v gs , i d = 250a v gs(th) 2 -- 4 v gate body leakage v gs =30v, v ds =0v i gss -- -- 100 na zero gate voltage drain current v ds =600v, v gs =0v i dss -- -- 1 a drain-source on-state resistance v gs =10v, i d =0.6a r ds(on) -- 3.6 5 forward transconductance v ds = 10v, i d = 0.2a g fs -- 0.8 -- s dynamic (note 4) total gate charge v ds =400v, i d =0.6a, v gs = 10v q g -- 13 -- nc gate-source charge q gs -- 2 -- gate-drain charge q gd -- 6 -- input capacitance v ds =25v, v gs =0v, f =1.0mhz c iss -- 435 -- pf output capacitance c oss -- 56 -- reverse transfer capacitance c rss -- 9.2 -- switching (note 5) turn-on delay time v gs =10v, i d =0.6a, v dd =300v, r g =18, t d(on) -- 12 -- ns turn-on rise time t r -- 21 -- turn-off delay time t d(off) -- 30 -- turn-off fall time t f -- 24 -- source-drain diode (note 3) forward on voltage i s = 8a, v gs = 0v v sd -- 0.85 1.15 v notes: 1. current limited by package 2. pulse width limited by the maximum junction temp erature 3. pulse test: pw 300s, duty cycle 2% 4. for design aid only, not subject to production t esting. 5. switching time is essentially independent of ope rating temperature.
tsm2n60s taiwan semiconductor document number: ds_p0000066 3 version: b15 ordering information part no. package packing tsm2n60scw rpg sot-223 2,500pcs / 13 reel note: 1. compliant to rohs directive 2011/65/eu and in ac cordance to weee 2002/96/ec 2. halogen-free according to iec 61249-2-21 definit ion
tsm2n60s taiwan semiconductor document number: ds_p0000066 4 version: b15 characteristics curves (t c = 25c unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
tsm2n60s taiwan semiconductor document number: ds_p0000066 5 version: b15 characteristics curves (tc = 25c unless otherwise noted) on-resistance vs. gate-source voltage threshold voltage maximum safe operating area normalized thermal transient impedance, junction-to -ambient
tsm2n60s taiwan semiconductor document number: ds_p0000066 6 version: b15 package outline dimensions (unit: millimeters) sot-223 suggested pad layout marking diagram y = year code m = mon th code for halogen free product o =jan p =feb q =mar r =apr s =may t =jun u =jul v =aug w =sep x =oct y =nov z =dec l = lot code (1~9, a~z)
tsm2n60s taiwan semiconductor document number: ds_p0000066 7 version: b15 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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